TPCC8105,L1Q(CM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details TPCC8105,L1Q(CM Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 700mW (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).