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|---|---|
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| 516+ | 0.33 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.31 EUR |
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Technische Details TPCP8003-H(TE85L,F Toshiba
Description: MOSFET N-CH 100V 2.2A PS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: PS-8 (2.9x2.4), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V.
Weitere Produktangebote TPCP8003-H(TE85L,F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| TPCP8003-H(TE85L,F | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 2.2A PS-8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PS-8 (2.9x2.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPCP8003-H(TE85L,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 2.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
Description: MOSFET N-CH 100V 2.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH