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Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
494+ | 0.32 EUR |
497+ | 0.3 EUR |
516+ | 0.28 EUR |
1000+ | 0.27 EUR |
2000+ | 0.25 EUR |
3000+ | 0.24 EUR |
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Technische Details TPCP8003-H(TE85L,F Toshiba
Description: MOSFET N-CH 100V 2.2A PS-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: PS-8 (2.9x2.4), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V.
Weitere Produktangebote TPCP8003-H(TE85L,F
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPCP8003-H(TE85L,F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 2.2A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PS-8 (2.9x2.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V |
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