| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.41 EUR |
| 6000+ | 0.38 EUR |
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Technische Details TPCP8407,LF Toshiba
Description: MOSFET N/P-CH 40V 5A PS-8, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PS-8, Vgs(th) (Max) @ Id: 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V, Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 690mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPCP8407,LF nach Preis ab 0.52 EUR bis 1.83 EUR
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TPCP8407,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 40V 5A PS-8Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PS-8 Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 690mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 1706 Stücke: Lieferzeit 10-14 Tag (e) |
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TPCP8407,LF | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 40V 5A/4A 8-Pin PS T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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TPCP8407,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 40V 5A PS-8 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PS-8 Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 690mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |