| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.6 EUR |
| 3000+ | 0.49 EUR |
| 6000+ | 0.45 EUR |
Produktrezensionen
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Technische Details TPCP8407,LF Toshiba
Description: MOSFET N/P-CH 40V 5A PS-8, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PS-8, Vgs(th) (Max) @ Id: 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V, Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 690mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPCP8407,LF nach Preis ab 0.62 EUR bis 2.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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TPCP8407,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 40V 5A PS-8Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PS-8 Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 690mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 1706 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPCP8407,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 5A PS-8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PS-8
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 690mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 5A PS-8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PS-8
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 690mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |