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TPCP8901(TE85L,F,M Toshiba


TPCP8901_datasheet_en_20131101-1135445.pdf Hersteller: Toshiba
Bipolar Transistors - BJT Transistor NPN PNP 50V 1A
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Technische Details TPCP8901(TE85L,F,M Toshiba

Description: TRANS NPN/PNP 50V 1A PS8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 1.48W, Current - Collector (Ic) (Max): 1A, 800mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V, Supplier Device Package: PS-8.

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TPCP8901(TE85L,F,M Hersteller : Toshiba Semiconductor and Storage Description: TRANS NPN/PNP 50V 1A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.48W
Current - Collector (Ic) (Max): 1A, 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: PS-8
Produkt ist nicht verfügbar
TPCP8901 (TE85L,F,M Hersteller : Shindengen Bipolar Transistors - BJT
Produkt ist nicht verfügbar