TPH1R204PB,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
Produktrezensionen
Produktbewertung abgeben
Technische Details TPH1R204PB,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V.
Weitere Produktangebote TPH1R204PB,L1Q nach Preis ab 0.79 EUR bis 3.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPH1R204PB,L1Q | Toshiba |
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R |
auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
TPH1R204PB,L1Q | Toshiba |
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R |
auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
TPH1R204PB,L1Q | Toshiba |
MOSFETs POWER MOSFET TRANSISTOR |
auf Bestellung 5308 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
TPH1R204PB,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH1R204PB,L1Q |
![]() |
Hersteller: Toshiba
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 1.71 EUR |
| 104+ | 1.68 EUR |
| 139+ | 1.23 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.89 EUR |
| TPH1R204PB,L1Q |
![]() |
Hersteller: Toshiba
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R
Trans MOSFET N-CH Si 40V 240A 8-Pin SOP Advance T/R
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 2.19 EUR |
| 103+ | 1.65 EUR |
| 104+ | 1.57 EUR |
| 139+ | 1.14 EUR |
| 250+ | 1.08 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.83 EUR |
| 3000+ | 0.79 EUR |
| TPH1R204PB,L1Q |
![]() |
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR
MOSFETs POWER MOSFET TRANSISTOR
auf Bestellung 5308 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.58 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.17 EUR |
| 2500+ | 1.15 EUR |
| TPH1R204PB,L1Q |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.77 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.23 EUR |



