Produktrezensionen
Produktbewertung abgeben
Technische Details TPH2R306NH Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 130A, Power dissipation: 78W, Case: SOP8A, Gate-source voltage: ±20V, On-state resistance: 4.7mΩ, Mounting: SMD, Gate charge: 72nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote TPH2R306NH
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
TPH2R306NH,L1Q(M | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Power dissipation: 78W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPH2R306NH,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH