| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.19 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
5000 Stücke
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Technische Details TPH2R408QM,L1Q Toshiba
Description: MOSFET N-CH 80V 120A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V.
Weitere Produktangebote TPH2R408QM,L1Q nach Preis ab 1.19 EUR bis 5.28 EUR
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TPH2R408QM,L1Q | Toshiba |
 Trans MOSFET N-CH Si 80V 120A 8-Pin SOP Advance T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH2R408QM,L1Q | Toshiba |
MOSFETs SOP8 N-CH 80V 120A |
auf Bestellung 80459 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R408QM,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 120A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TPH2R408QM,L1Q |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 80V 120A 8-Pin SOP Advance T/R
Trans MOSFET N-CH Si 80V 120A 8-Pin SOP Advance T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.19 EUR |
| TPH2R408QM,L1Q |
|
Hersteller: Toshiba
MOSFETs SOP8 N-CH 80V 120A
MOSFETs SOP8 N-CH 80V 120A
auf Bestellung 80459 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.5 EUR |
| 10+ | 2.89 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.5 EUR |
| 5000+ | 1.4 EUR |
| TPH2R408QM,L1Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.28 EUR |
| 10+ | 3.39 EUR |
| 50+ | 2.59 EUR |
| 100+ | 2.33 EUR |