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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 38.97 EUR |
| 10+ | 35.94 EUR |
| 30+ | 34.32 EUR |
| 120+ | 30.68 EUR |
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Technische Details TPH3205WSBQA Transphorm
Description: GANFET N-CH 650V 35A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 700µA, Supplier Device Package: TO-247-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
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TPH3205WSBQA | Hersteller : Transphorm |
 Description: GANFET N-CH 650V 35A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 700µA Supplier Device Package: TO-247-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
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