TPH3205WSBQA Transphorm
Hersteller: TransphormDescription: GANFET N-CH 650V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 38.6 EUR |
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Technische Details TPH3205WSBQA Transphorm
Description: GANFET N-CH 650V 35A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 700µA, Supplier Device Package: TO-247-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V.
Weitere Produktangebote TPH3205WSBQA nach Preis ab 30.68 EUR bis 38.97 EUR
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TPH3205WSBQA | Hersteller : Transphorm |
MOSFET GAN FET 650V 35A TO247 |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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