TPH3205WSBQA Transphorm

Description: GANFET N-CH 650V 35A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 700µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V, Qualification: AEC-Q101.