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TPH3R003PL,LQ

TPH3R003PL,LQ Toshiba Semiconductor and Storage

TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.41 EUR
Mindestbestellmenge: 8
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Technische Details TPH3R003PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 88A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V.

Weitere Produktangebote TPH3R003PL,LQ nach Preis ab 0.67 EUR bis 2.64 EUR

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TPH3R003PL,LQ TPH3R003PL,LQ Hersteller : Toshiba TPH3R003PL_datasheet_en_20161019-1075481.pdf MOSFETs N-Ch 30V 2940pF 50nC 134A 90W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.64 EUR
10+1.62 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.80 EUR
3000+0.69 EUR
6000+0.67 EUR
Mindestbestellmenge: 2
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TPH3R003PL,LQ TPH3R003PL,LQ Hersteller : Toshiba 13312docget.jspdid55430prodnametph3r003pl.jspdid55430prodnametph3r003p.pdf Trans MOSFET N-CH Si 30V 134A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R003PL,LQ TPH3R003PL,LQ Hersteller : Toshiba 13312docget.jspdid55430prodnametph3r003pl.jspdid55430prodnametph3r003p.pdf Trans MOSFET N-CH Si 30V 134A 8-Pin SOP Advance T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH3R003PL,LQ TPH3R003PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH