| Anzahl | Preis |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.82 EUR |
| 3000+ | 0.75 EUR |
| 6000+ | 0.69 EUR |
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Technische Details TPH3R704PC,LQ Toshiba
Description: MOSFET N-CH 40V 82A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 2.4V @ 300µA, Power Dissipation (Max): 830mW (Ta), 90W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TPH3R704PC,LQ nach Preis ab 0.88 EUR bis 2.87 EUR
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TPH3R704PC,LQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 40V 82A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 300µA Power Dissipation (Max): 830mW (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 1435 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH3R704PC,LQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.88 EUR |