auf Bestellung 4134 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.71 EUR |
| 5000+ | 0.68 EUR |
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Technische Details TPH4R003NL,L1Q Toshiba
Description: MOSFET N-CH 30V 40A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 1.6W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.
Weitere Produktangebote TPH4R003NL,L1Q nach Preis ab 0.71 EUR bis 2.29 EUR
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TPH4R003NL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 30V 40A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.6W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
auf Bestellung 4086 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R003NL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 68A 8-Pin SOP Advance T/R |
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TPH4R003NL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 68A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
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TPH4R003NL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 40A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.6W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
Produkt ist nicht verfügbar |