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Technische Details TPH4R10ANL Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 70A; 67W; SOP8A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 70A, Power dissipation: 67W, Case: SOP8A, Gate-source voltage: ±20V, On-state resistance: 6.6mΩ, Mounting: SMD, Gate charge: 75nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote TPH4R10ANL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TPH4R10ANL,L1Q(M | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 70A; 67W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 67W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPH4R10ANL,L1Q(M |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; 67W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 67W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; 67W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 67W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH