TPH4R606NH,L1Q
Produktcode: 179170
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Weitere Produktangebote TPH4R606NH,L1Q nach Preis ab 1.33 EUR bis 4.29 EUR
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TPH4R606NH,L1Q | Toshiba |
MOSFETs U-MOSVIII-H 60V 85A 49nC MOSFET |
auf Bestellung 4925 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R606NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 32A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
auf Bestellung 3227 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH4R606NH,L1Q | Toshiba |
N-MOSFET 60V 32A 1.6W 4.6mΩ TPH4R606NH,L1Q Toshiba TTPH4r606nh Anzahl je Verpackung: 10 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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| TPH4R606NH,L1Q |
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Hersteller: Toshiba
MOSFETs U-MOSVIII-H 60V 85A 49nC MOSFET
MOSFETs U-MOSVIII-H 60V 85A 49nC MOSFET
auf Bestellung 4925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.28 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.46 EUR |
| 5000+ | 1.33 EUR |
| TPH4R606NH,L1Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
Description: MOSFET N-CH 60V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
auf Bestellung 3227 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.29 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.57 EUR |
| TPH4R606NH,L1Q |
|
Hersteller: Toshiba
N-MOSFET 60V 32A 1.6W 4.6mΩ TPH4R606NH,L1Q Toshiba TTPH4r606nh
Anzahl je Verpackung: 10 Stücke
N-MOSFET 60V 32A 1.6W 4.6mΩ TPH4R606NH,L1Q Toshiba TTPH4r606nh
Anzahl je Verpackung: 10 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 1.98 EUR |