
auf Bestellung 2653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.15 EUR |
10+ | 2.76 EUR |
100+ | 1.95 EUR |
500+ | 1.58 EUR |
1000+ | 1.47 EUR |
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Technische Details TPH4R606NH,L1Q Toshiba
Description: MOSFET N-CH 60V 32A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V, Power Dissipation (Max): 1.6W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V.
Weitere Produktangebote TPH4R606NH,L1Q nach Preis ab 1.43 EUR bis 4.63 EUR
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TPH4R606NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
auf Bestellung 4623 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R606NH,L1Q | Hersteller : Toshiba |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 101 Stücke: Lieferzeit 7-14 Tag (e) |
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TPH4R606NH,L1Q Produktcode: 179170
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TPH4R606NH,L1Q | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TPH4R606NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
Produkt ist nicht verfügbar |