TPH4R606NH,L1Q
Produktcode: 179170
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Weitere Produktangebote TPH4R606NH,L1Q nach Preis ab 1.33 EUR bis 4.29 EUR
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TPH4R606NH,L1Q | Hersteller : Toshiba |
MOSFETs U-MOSVIII-H 60V 85A 49nC MOSFET |
auf Bestellung 4925 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R606NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 32A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
auf Bestellung 3227 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH4R606NH,L1Q | Hersteller : Toshiba |
N-MOSFET 60V 32A 1.6W 4.6mΩ TPH4R606NH,L1Q Toshiba TTPH4r606nh Anzahl je Verpackung: 10 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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TPH4R606NH,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
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TPH4R606NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 32A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V |
Produkt ist nicht verfügbar |