auf Bestellung 9715 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 5.88 EUR |
| 11+ | 4.89 EUR |
| 100+ | 3.9 EUR |
| 250+ | 3.59 EUR |
| 500+ | 3.28 EUR |
| 1000+ | 2.83 EUR |
| 5000+ | 2.56 EUR |
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Technische Details TPH9R00CQ5,LQ Toshiba
Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V, Power Dissipation (Max): 3W (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V.
Weitere Produktangebote TPH9R00CQ5,LQ nach Preis ab 1.76 EUR bis 4.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TPH9R00CQ5,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPH9R00CQ5,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 150V U-MOS X-H SOP-ADVANCE(N) 9M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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