TPHR9003NL,L1Q
Produktcode: 128207
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Weitere Produktangebote TPHR9003NL,L1Q nach Preis ab 1.56 EUR bis 4.47 EUR
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TPHR9003NL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 220A 8-Pin SOP Advance T/R |
auf Bestellung 285000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPHR9003NL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 220A 8-Pin SOP Advance T/R |
auf Bestellung 285000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPHR9003NL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 60A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
auf Bestellung 3708 Stücke: Lieferzeit 10-14 Tag (e) |
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TPHR9003NL,L1Q | Hersteller : Toshiba |
MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V |
auf Bestellung 3827 Stücke: Lieferzeit 10-14 Tag (e) |
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TPHR9003NL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 60A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
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