TPHR9003NL,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 5266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.80 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPHR9003NL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V, Power Dissipation (Max): 1.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V.
Weitere Produktangebote TPHR9003NL,L1Q nach Preis ab 1.55 EUR bis 4.10 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPHR9003NL,L1Q | Hersteller : Toshiba |
MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V |
auf Bestellung 4419 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
TPHR9003NL,L1Q Produktcode: 128207
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Produkt ist nicht verfügbar
|
|||||||||||||||
 |
TPHR9003NL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 220A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
TPHR9003NL,L1Q | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 220A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
TPHR9003NL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 60A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V |
Produkt ist nicht verfügbar |