TPS1100PWR Texas Instruments

Description: MOSFET P-CH 15V 1.27A 8TSSOP, Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V, Drain to Source Voltage (Vdss): 15 V, Vgs (Max): +2V, -15V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Part Status: Active, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 504mW (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.27A (Ta), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).