TPS1101D Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 15V 2.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
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Technische Details TPS1101D Texas Instruments
Description: MOSFET P-CH 15V 2.3A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V, Power Dissipation (Max): 791mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): +2V, -15V, Drain to Source Voltage (Vdss): 15 V, Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V.
Weitere Produktangebote TPS1101D nach Preis ab 1.85 EUR bis 4.31 EUR
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TPS1101D | Texas Instruments |
MOSFETs Single P-Ch Enh-Mode MOSFET |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1101D | Texas Instruments |
Description: MOSFET P-CH 15V 2.3A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 791mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): +2V, -15V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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| TPS1101D | TI |
06+ ORIGINAL |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TPS1101D |
|
Hersteller: Texas Instruments
MOSFETs Single P-Ch Enh-Mode MOSFET
MOSFETs Single P-Ch Enh-Mode MOSFET
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 75+ | 1.95 EUR |
| 525+ | 1.85 EUR |
| TPS1101D |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 15V 2.3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
Description: MOSFET P-CH 15V 2.3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 791mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): +2V, -15V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.31 EUR |
| 10+ | 3.87 EUR |
| 100+ | 3.11 EUR |
| TPS1101D |
|
Hersteller: TI
06+ ORIGINAL
06+ ORIGINAL
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)