Technische Details TPS28226DRBR TI
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A, Type of integrated circuit: driver, Topology: MOSFET half-bridge, Kind of integrated circuit: MOSFET gate driver, Case: SON8, Output current: 2A, Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Mounting: SMD, Operating temperature: -40...125°C, Impulse rise time: 10ns, Pulse fall time: 10ns, Kind of package: reel; tape, Protection: undervoltage UVP.
Weitere Produktangebote TPS28226DRBR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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TPS28226DRBR | Texas Instruments |
 Description: IC GATE DRVR HALF-BRIDGE 8SONPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SON (3x3) Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TPS28226DRBR | Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SON Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SON (3x3) Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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TPS28226DRBR | Texas Instruments |
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver A 595 A 595-TPS28226DRBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TPS28226DRBR | TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: MOSFET gate driver Case: SON8 Output current: 2A Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 10ns Pulse fall time: 10ns Kind of package: reel; tape Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TPS28226DRBR |
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Hersteller: Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SON (3x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SON (3x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TPS28226DRBR |
|
Hersteller: Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SON (3x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SON (3x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPS28226DRBR |
|
Hersteller: Texas Instruments
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver A 595 A 595-TPS28226DRBT
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver A 595 A 595-TPS28226DRBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TPS28226DRBR |
|
Hersteller: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: MOSFET gate driver
Case: SON8
Output current: 2A
Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 10ns
Pulse fall time: 10ns
Kind of package: reel; tape
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SON8; 2A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: MOSFET gate driver
Case: SON8
Output current: 2A
Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 10ns
Pulse fall time: 10ns
Kind of package: reel; tape
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH