TQM025NH04CR-V RLG Taiwan Semiconductor Corporation

Description: 40V, 100A, SINGLE N-CHANNEL POWE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Grade: Automotive, Supplier Device Package: 8-PDFNU (4.9x5.75), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).