TQM056NH04LCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 78.9W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.95 EUR |
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Technische Details TQM056NH04LCR RLG Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc), Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 78.9W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TQM056NH04LCR RLG nach Preis ab 0.91 EUR bis 3.36 EUR
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TQM056NH04LCR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 40V, 54A, Single N-Channel Power MOSFET |
auf Bestellung 1720 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM056NH04LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 54A (Tc) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V |
auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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