TQM070NH04LCR RLG

TQM070NH04LCR RLG Taiwan Semiconductor Corporation


TQM070NH04LCR_D2309.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2169 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TQM070NH04LCR RLG Taiwan Semiconductor Corporation

Description: 40V, 54A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V, Power Dissipation (Max): 46.8W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2169 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote TQM070NH04LCR RLG nach Preis ab 0.74 EUR bis 2.96 EUR

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TQM070NH04LCR RLG TQM070NH04LCR RLG Hersteller : Taiwan Semiconductor TQM070NH04LCR_D2309.pdf MOSFETs 40V, 54A, Single N-Channel Power MOSFET
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.90 EUR
10+1.56 EUR
100+1.21 EUR
500+1.03 EUR
1000+0.88 EUR
2500+0.74 EUR
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TQM070NH04LCR RLG TQM070NH04LCR RLG Hersteller : Taiwan Semiconductor Corporation TQM070NH04LCR_D2309.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2169 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.87 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TQM070NH04LCR RLG TQM070NH04LCR RLG Hersteller : Taiwan Semiconductor tqm070nh04lcr_c2305.pdf Trans MOSFET N-CH 40V 70A 8-Pin PDFN EP T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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TQM070NH04LCR RLG Hersteller : TAIWAN SEMICONDUCTOR TQM070NH04LCR_D2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Drain-source voltage: 40V
Drain current: 54A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 46.8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: SMD
Case: PDFN56U
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