TQM110NB04DCR RLG

TQM110NB04DCR RLG Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/50A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 58W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.63 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TQM110NB04DCR RLG Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 40V 10A/50A 8PDFNU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 58W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TQM110NB04DCR RLG nach Preis ab 1.20 EUR bis 3.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TQM110NB04DCR RLG TQM110NB04DCR RLG Hersteller : Taiwan Semiconductor MOSFETs 40V, 50A, Dual N-Channel Power MOSFET
auf Bestellung 6016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+2.22 EUR
100+1.75 EUR
250+1.63 EUR
500+1.48 EUR
1000+1.27 EUR
2500+1.20 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TQM110NB04DCR RLG TQM110NB04DCR RLG Hersteller : Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 40V 10A/50A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 58W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+3.00 EUR
100+2.39 EUR
500+2.02 EUR
1000+1.72 EUR
Mindestbestellmenge: 5
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TQM110NB04DCR RLG TQM110NB04DCR RLG Hersteller : Taiwan Semiconductor tqm110nb04dcr_a2006.pdf Trans MOSFET N-CH Si 40V 10A Automotive 8-Pin PDFN-U EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH