TQM250NB06DCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/30A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 58W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2500+ | 0.92 EUR |
| 5000+ | 0.88 EUR |
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Technische Details TQM250NB06DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/30A 8PDFNU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 58W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote TQM250NB06DCR RLG nach Preis ab 0.92 EUR bis 2.89 EUR
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TQM250NB06DCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A/30A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 58W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 7455 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM250NB06DCR RLG | Hersteller : Taiwan Semiconductor | MOSFETs 60V, 30A, Dual N-Channel Power MOSFET |
auf Bestellung 4925 Stücke: Lieferzeit 10-14 Tag (e) |
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