
TQM2N7002KCU RFG Taiwan Semiconductor Corporation

Description: 60V, 0.32A, SINGLE N-CHANNEL SMA
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Power Dissipation (Max): 316mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
33+ | 0.55 EUR |
47+ | 0.37 EUR |
100+ | 0.24 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
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Technische Details TQM2N7002KCU RFG Taiwan Semiconductor Corporation
Description: 60V, 0.32A, SINGLE N-CHANNEL SMA, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V, Power Dissipation (Max): 316mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote TQM2N7002KCU RFG nach Preis ab 0.07 EUR bis 0.60 EUR
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TQM2N7002KCU RFG | Hersteller : Taiwan Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM2N7002KCU RFG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Power Dissipation (Max): 316mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.5 pF @ 30 V Qualification: AEC-Q101 |
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TQM2N7002KCU RFG | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; 316mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.32A Power dissipation: 316mW Case: SOT323 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 1.7nC Kind of package: tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |