TQM300NB06DCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.84 EUR |
| 5000+ | 0.8 EUR |
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Technische Details TQM300NB06DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 2.5W (Ta), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TQM300NB06DCR RLG nach Preis ab 0.81 EUR bis 3.01 EUR
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TQM300NB06DCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2.5W (Ta), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TQM300NB06DCR RLG | Hersteller : Taiwan Semiconductor | MOSFETs 60V, 25A, Dual N-Channel Power MOSFET |
auf Bestellung 4667 Stücke: Lieferzeit 10-14 Tag (e) |
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