TRS20H120H,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 61A TO2472L
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2L
Current - Average Rectified (Io): 61A
Capacitance @ Vr, F: 2070pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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Technische Details TRS20H120H,S1Q Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 61A TO2472L, Current - Reverse Leakage @ Vr: 130 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-2L, Current - Average Rectified (Io): 61A, Capacitance @ Vr, F: 2070pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote TRS20H120H,S1Q nach Preis ab 14.34 EUR bis 21.63 EUR
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TRS20H120H,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes RECT 1200V 20A SBD |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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