TRS24N65FB,S1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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Technische Details TRS24N65FB,S1Q Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 12A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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TRS24N65FB,S1Q | Hersteller : Toshiba |
SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=24A |
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