TSCDF06065G1 Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 4.07 EUR |
| 10+ | 2.64 EUR |
| 100+ | 2.15 EUR |
| 1000+ | 1.33 EUR |
| 2000+ | 1.23 EUR |
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Technische Details TSCDF06065G1 Taiwan Semiconductor
Description: DIODE SIC 650V 6A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Diode Type: Schottky - Single, Operating Temperature: -55°C ~ 175°C (TJ), Capacitance @ Vr, F: 30.5pF @ 400V, 1MHz, Voltage - Peak Reverse (Max): 650V, Supplier Device Package: ITO-220AC, Current - Max: 6 A, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 6A, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 6 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote TSCDF06065G1 nach Preis ab 2.42 EUR bis 4.88 EUR
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TSCDF06065G1 | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE SIC 650V 6A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack Diode Type: Schottky - Single Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Vr, F: 30.5pF @ 400V, 1MHz Voltage - Peak Reverse (Max): 650V Supplier Device Package: ITO-220AC Current - Max: 6 A Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 6A Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 901 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSCDF06065G1 | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube Kind of package: tube Case: ITO220AC Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Load current: 6A Max. off-state voltage: 650V |
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