TSCDF08065G1 Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.43 EUR |
| 10+ | 3.67 EUR |
| 1000+ | 1.83 EUR |
| 2000+ | 1.76 EUR |
| 4000+ | 1.73 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details TSCDF08065G1 Taiwan Semiconductor
Description: DIODE SIC 650V 8A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 39pF @ 400V, 1MHz, Voltage - Peak Reverse (Max): 650V, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Max: 8 A, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote TSCDF08065G1 nach Preis ab 1.99 EUR bis 5.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TSCDF08065G1 | Taiwan Semiconductor Corporation |
 Description: DIODE SIC 650V 8A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Diode Type: Schottky - Single Speed: No Recovery Time > 500mA (Io) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 39pF @ 400V, 1MHz Voltage - Peak Reverse (Max): 650V Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Current - Max: 8 A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSCDF08065G1 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SIC 650V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 39pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Max: 8 A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIC 650V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Diode Type: Schottky - Single
Speed: No Recovery Time > 500mA (Io)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 39pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Max: 8 A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.57 EUR |
| 50+ | 2.74 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.99 EUR |