TSCDF10065G1 Taiwan Semiconductor Corporation

Description: DIODE SIC 650V 10A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Diode Type: Schottky - Single, Speed: No Recovery Time > 500mA (Io), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 45pF @ 400V, 1MHz, Voltage - Peak Reverse (Max): 650V, Current - Average Rectified (Io): 10A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Max: 10 A, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.