
TSCDH20065G1 Taiwan Semiconductor
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 14.13 EUR |
10+ | 12.11 EUR |
120+ | 10.08 EUR |
270+ | 9.66 EUR |
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Technische Details TSCDH20065G1 Taiwan Semiconductor
Description: DIODE ARR SCHOTT 650V 20A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote TSCDH20065G1 nach Preis ab 8.83 EUR bis 14.77 EUR
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TSCDH20065G1 | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 650V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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TSCDH20065G1 | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 76A Leakage current: 0.2mA Kind of package: tube |
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