TSCDT08065G1 Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 5.86 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.48 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.8 EUR |
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Technische Details TSCDT08065G1 Taiwan Semiconductor
Description: DIODE SCHOTTKY 650V 8A TO220AC, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 39pF @ 400V, 1MHz, Technology: Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote TSCDT08065G1 nach Preis ab 2.9 EUR bis 5.95 EUR
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TSCDT08065G1 | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE SCHOTTKY 650V 8A TO220ACCurrent - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 39pF @ 400V, 1MHz Technology: Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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