TSM018NM08TL RAG Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.65 EUR |
| 10+ | 7.81 EUR |
| 100+ | 5.63 EUR |
| 500+ | 5.43 EUR |
| 2000+ | 4.88 EUR |
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Technische Details TSM018NM08TL RAG Taiwan Semiconductor
Description: 80V, 300A, SINGLE, N-CHANNEL LOW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TOLLA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12182 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote TSM018NM08TL RAG nach Preis ab 5.31 EUR bis 11.88 EUR
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TSM018NM08TL RAG | Taiwan Semiconductor Corporation |
 Description: 80V, 300A, SINGLE, N-CHANNEL LOWPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TOLLA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12182 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 610 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM018NM08TL RAG |
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Hersteller: Taiwan Semiconductor Corporation
Description: 80V, 300A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12182 pF @ 40 V
Qualification: AEC-Q101
Description: 80V, 300A, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TOLLA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12182 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.88 EUR |
| 10+ | 7.95 EUR |
| 100+ | 5.74 EUR |
| 500+ | 5.31 EUR |