TSM035NB04LCZ C0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 40V, 157A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.90 EUR |
| 10+ | 5.30 EUR |
| 100+ | 4.34 EUR |
| 500+ | 3.70 EUR |
| 1000+ | 3.12 EUR |
| 2000+ | 2.96 EUR |
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Technische Details TSM035NB04LCZ C0G Taiwan Semiconductor Corporation
Description: 40V, 157A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM035NB04LCZ C0G | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH Si 40V 157A 3-Pin(3+Tab) TO-220 |
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