TSM043NB04CZ C0G Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.32 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.83 EUR |
| 250+ | 2.73 EUR |
| 500+ | 2.7 EUR |
| 1000+ | 2.57 EUR |
| 2000+ | 2.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM043NB04CZ C0G Taiwan Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO220AB, Kind of package: tube, Mounting: THT, Polarisation: unipolar, Gate charge: 74nC, On-state resistance: 43.5mΩ, Power dissipation: 125W, Drain current: 124A, Gate-source voltage: ±20V, Drain-source voltage: 40V.
Weitere Produktangebote TSM043NB04CZ C0G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
TSM043NB04CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 74nC On-state resistance: 43.5mΩ Power dissipation: 125W Drain current: 124A Gate-source voltage: ±20V Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TSM043NB04CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 43.5mΩ
Power dissipation: 125W
Drain current: 124A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 43.5mΩ
Power dissipation: 125W
Drain current: 124A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

