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TSM043NB04LCZ C0G

TSM043NB04LCZ C0G Taiwan Semiconductor Corporation

TSM043NB04LCZ_A2008.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 124A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V
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500+1.39 EUR
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Technische Details TSM043NB04LCZ C0G Taiwan Semiconductor Corporation

Description: 40V, 124A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V, Power Dissipation (Max): 2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V.

Weitere Produktangebote TSM043NB04LCZ C0G

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TSM043NB04LCZ C0G TSM043NB04LCZ C0G TAIWAN SEMICONDUCTOR TSM043NB04LCZ_A2008.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM043NB04LCZ C0G TSM043NB04LCZ_A2008.pdf
TSM043NB04LCZ C0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB
On-state resistance: 43.5mΩ
Mounting: THT
Power dissipation: 125W
Gate charge: 76nC
Polarisation: unipolar
Drain current: 124A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH