TSM043NH04LCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM043NH04LCR RLG Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM043NH04LCR RLG nach Preis ab 1.08 EUR bis 3.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM043NH04LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
TSM043NH04LCR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 40V, 54A, Single N-Channel Power MOSFET |
auf Bestellung 4764 Stücke: Lieferzeit 10-14 Tag (e) |
|