TSM045NB06CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 60V 16A/104A 8PDFN, Power Dissipation (Max): 3.1W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 4V @ 250µA.