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TSM060N03CP ROG

TSM060N03CP ROG Taiwan Semiconductor Corporation

TSM060N03CP_B1807.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.50 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500
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Technische Details TSM060N03CP ROG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 30V 70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V.

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TSM060N03CP ROG TSM060N03CP ROG Hersteller : Taiwan Semiconductor Corporation TSM060N03CP_B1807.pdf Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
auf Bestellung 7429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TSM060N03CP ROG TSM060N03CP ROG Hersteller : TAIWAN SEMICONDUCTOR TSM060N03CP_B1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.30 EUR
Mindestbestellmenge: 31
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TSM060N03CP ROG TSM060N03CP ROG Hersteller : Taiwan Semiconductor tsm060n03cp_b1807.pdf Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) DPAK T/R
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TSM060N03CP ROG TSM060N03CP ROG Hersteller : Taiwan Semiconductor TSM060N03CP_B1807.pdf MOSFETs 30V, 70A, Single N-Channel Power MOSFET
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