TSM070NH04LCR RLG Taiwan Semiconductor Corporation

Description: 40V, 54A, SINGLE N-CHANNEL POWER, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 46.8W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc), FET Type: N-Channel.