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TSM070NH04LCR RLG Taiwan Semiconductor


TSM070NH04LCR_E2207.pdf
Hersteller: Taiwan Semiconductor
MOSFETs 40V, 54A, Single N-Channel Power MOSFET
auf Bestellung 2500 Stücke:
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10+2 EUR
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Technische Details TSM070NH04LCR RLG Taiwan Semiconductor

Description: 40V, 54A, SINGLE N-CHANNEL POWER, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 46.8W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc), FET Type: N-Channel.

Weitere Produktangebote TSM070NH04LCR RLG nach Preis ab 0.96 EUR bis 3.2 EUR

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TSM070NH04LCR RLG TSM070NH04LCR RLG Taiwan Semiconductor Corporation TSM070NH04LCR_E2207.pdf Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4345 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM070NH04LCR RLG TSM070NH04LCR_E2207.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 46.8W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4345 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH