TSM085N03PQ33 RGG Taiwan Semiconductor Corporation


TSM085N03PQ33_D1608.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.38 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM085N03PQ33 RGG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 52A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V.

Weitere Produktangebote TSM085N03PQ33 RGG nach Preis ab 0.37 EUR bis 1.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TSM085N03PQ33 RGG TSM085N03PQ33 RGG Taiwan Semiconductor Corporation TSM085N03PQ33_D1608.pdf Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.65 EUR
21+1.04 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
2000+0.43 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM085N03PQ33 RGG TSM085N03PQ33 RGG Taiwan Semiconductor TSM085N03PQ33_D1608.pdf MOSFETs 30V, 52A, Single N-Channel Power MOSFET
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.76 EUR
10+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.45 EUR
5000+0.4 EUR
10000+0.37 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM085N03PQ33 RGG TSM085N03PQ33_D1608.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
21+1.04 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.46 EUR
2000+0.43 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM085N03PQ33 RGG TSM085N03PQ33_D1608.pdf
Hersteller: Taiwan Semiconductor
MOSFETs 30V, 52A, Single N-Channel Power MOSFET
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.76 EUR
10+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.45 EUR
5000+0.4 EUR
10000+0.37 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH