TSM110NB04LDCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details TSM110NB04LDCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2W (Ta), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM110NB04LDCR RLG nach Preis ab 0.92 EUR bis 3.2 EUR
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TSM110NB04LDCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 10A/48A 8DFN Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4235 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM110NB04LDCR RLG | Taiwan Semiconductor | MOSFETs 40V, 48A, Dual N-Channel Power MOSFET |
auf Bestellung 1804 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM110NB04LDCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 10A/48A 8DFN
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.01 EUR |
| TSM110NB04LDCR RLG |
Hersteller: Taiwan Semiconductor
MOSFETs 40V, 48A, Dual N-Channel Power MOSFET
MOSFETs 40V, 48A, Dual N-Channel Power MOSFET
auf Bestellung 1804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.2 EUR |
| 10+ | 2.03 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.92 EUR |