TSM150NB04CR RLG Taiwan Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 220+ | 0.67 EUR |
| 248+ | 0.57 EUR |
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Technische Details TSM150NB04CR RLG Taiwan Semiconductor
Description: MOSFET N-CH 40V 10A/41A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V.
Weitere Produktangebote TSM150NB04CR RLG nach Preis ab 0.55 EUR bis 2.45 EUR
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TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 40V 41A 8-Pin PDFN EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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.JPG "TSM150NB04CR RLG") |
TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 10A/41A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 10A/41A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 10A 8-Pin PDFN EP T/R |
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TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 41A 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |
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TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 40V 41A 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |
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TSM150NB04CR RLG | Hersteller : Taiwan Semiconductor |
MOSFET 40V, 41A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| TSM150NB04CR RLG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Mounting: SMD Drain-source voltage: 40V Drain current: 10A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Kind of package: tape Gate charge: 19nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
Produkt ist nicht verfügbar |