TSM150NB04CR RLG

TSM150NB04CR RLG Taiwan Semiconductor Corporation


TSM150NB04CR_B1804.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A 8PDFN
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM150NB04CR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 10A/41A 8PDFN, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V.

Weitere Produktangebote TSM150NB04CR RLG nach Preis ab 1.11 EUR bis 2.45 EUR

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TSM150NB04CR RLG TSM150NB04CR RLG Taiwan Semiconductor Corporation TSM150NB04CR_B1804.pdf Description: MOSFET N-CH 40V 10A/41A 8PDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+2.19 EUR
100+1.71 EUR
500+1.41 EUR
1000+1.11 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TSM150NB04CR RLG TSM150NB04CR_B1804.pdf
TSM150NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 10A/41A 8PDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+2.19 EUR
100+1.71 EUR
500+1.41 EUR
1000+1.11 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH