TSM150NB04LCV RGG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 40V, 36A, SINGLE N-CHANNEL POWER
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.35 EUR |
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Technische Details TSM150NB04LCV RGG Taiwan Semiconductor Corporation
Description: 40V, 36A, SINGLE N-CHANNEL POWER, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.9W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (3.15x3.1).
Weitere Produktangebote TSM150NB04LCV RGG nach Preis ab 0.39 EUR bis 1.51 EUR
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TSM150NB04LCV RGG | Hersteller : Taiwan Semiconductor Corporation |
Description: 40V, 36A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 9938 Stücke: Lieferzeit 10-14 Tag (e) |
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