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TSM170N06CP ROG

TSM170N06CP ROG Taiwan Semiconductor Corporation

TSM170N06_B15.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 38A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 102500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
Mindestbestellmenge: 2500
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Technische Details TSM170N06CP ROG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 60V 38A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.

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TSM170N06CP ROG TSM170N06CP ROG Hersteller : Taiwan Semiconductor Corporation TSM170N06_B15.pdf Description: MOSFET N-CHANNEL 60V 38A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 104754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
20+0.89 EUR
100+0.61 EUR
500+0.58 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
TSM170N06CP ROG TSM170N06CP ROG Hersteller : Taiwan Semiconductor TSM170N06_B15.pdf MOSFETs 60V, 38A, Single N-Channel Power MOSFET
auf Bestellung 17475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.09 EUR
10+0.94 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.53 EUR
Mindestbestellmenge: 3
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TSM170N06CP ROG TSM170N06CP ROG Hersteller : Taiwan Semiconductor tsm170n06_b15.pdf Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R
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