TSM180N03CS RLG Taiwan Semiconductor
auf Bestellung 5578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.50 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
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Technische Details TSM180N03CS RLG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 30V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V.
Weitere Produktangebote TSM180N03CS RLG nach Preis ab 0.23 EUR bis 0.51 EUR
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TSM180N03CS RLG | Hersteller : Taiwan Semiconductor Corporation |
 Description: MOSFET N-CHANNEL 30V 9A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 2164 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM180N03CS RLG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 30V 9A 8-Pin SOP T/R |
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TSM180N03CS RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
Produkt ist nicht verfügbar |