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TSM1NB60CW RPG

TSM1NB60CW RPG Taiwan Semiconductor Corporation

TSM1NB60CW_A2206.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.44 EUR
5000+0.43 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TSM1NB60CW RPG Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 600V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V.

Weitere Produktangebote TSM1NB60CW RPG nach Preis ab 0.50 EUR bis 1.34 EUR

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TSM1NB60CW RPG TSM1NB60CW RPG Hersteller : Taiwan Semiconductor TSM1NB60CW_A2206.pdf MOSFETs 600V, 1A, Single N-Channel Power MOSFET
auf Bestellung 6563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.31 EUR
10+1.14 EUR
100+0.79 EUR
500+0.66 EUR
1000+0.56 EUR
2500+0.50 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TSM1NB60CW RPG TSM1NB60CW RPG Hersteller : Taiwan Semiconductor Corporation TSM1NB60CW_A2206.pdf Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
auf Bestellung 9516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
17+1.06 EUR
100+0.80 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TSM1NB60CW RPG TSM1NB60CW RPG Hersteller : Taiwan Semiconductor 4896490005937573tsm1nb60_d1706.pdf Trans MOSFET N-CH 600V 1A 4-Pin(3+Tab) SOT-223 T/R
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