TSM1NB60CW RPG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM1NB60CW RPG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V.
Weitere Produktangebote TSM1NB60CW RPG nach Preis ab 0.5 EUR bis 1.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM1NB60CW RPG | Taiwan Semiconductor |
MOSFETs 600V, 1A, Single N-Channel Power MOSFET |
auf Bestellung 6563 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
TSM1NB60CW RPG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 1A SOT223Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 9516 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TSM1NB60CW RPG |
![]() |
Hersteller: Taiwan Semiconductor
MOSFETs 600V, 1A, Single N-Channel Power MOSFET
MOSFETs 600V, 1A, Single N-Channel Power MOSFET
auf Bestellung 6563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.31 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.56 EUR |
| 2500+ | 0.5 EUR |
| TSM1NB60CW RPG |
![]() |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 600V 1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 9516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 17+ | 1.06 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |

