TSM210NH08LDCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 80A, 33V, N AND N-CHANNEL DUAL M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 40V
Rds On (Max) @ Id, Vgs: 21mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Qualification: AEC-Q101
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Technische Details TSM210NH08LDCR RLG Taiwan Semiconductor Corporation
Description: 80A, 33V, N AND N-CHANNEL DUAL M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 33A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 40V, Rds On (Max) @ Id, Vgs: 21mOhm @ 16.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFNU (4.9x5.75), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote TSM210NH08LDCR RLG nach Preis ab 1.11 EUR bis 3.47 EUR
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TSM210NH08LDCR RLG | Taiwan Semiconductor Corporation |
Description: 80A, 33V, N AND N-CHANNEL DUAL M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 33A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 40V Rds On (Max) @ Id, Vgs: 21mOhm @ 16.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM210NH08LDCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 80A, 33V, N AND N-CHANNEL DUAL M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 40V
Rds On (Max) @ Id, Vgs: 21mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Qualification: AEC-Q101
Description: 80A, 33V, N AND N-CHANNEL DUAL M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 40V
Rds On (Max) @ Id, Vgs: 21mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.11 EUR |