TSM220NB06LCR RLG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 9+ | 2.06 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
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Technische Details TSM220NB06LCR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 68W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TSM220NB06LCR RLG
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 8A/35A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor |
MOSFETs 60V, 35A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |