
TSM220NB06LCR RLG Taiwan Semiconductor
auf Bestellung 2447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1482+ | 0.10 EUR |
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Technische Details TSM220NB06LCR RLG Taiwan Semiconductor
Description: MOSFET N-CH 60V 8A/35A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V, Power Dissipation (Max): 3.1W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V.
Weitere Produktangebote TSM220NB06LCR RLG nach Preis ab 0.60 EUR bis 2.06 EUR
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V |
auf Bestellung 3129 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor |
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auf Bestellung 2447 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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![]() |
TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V |
Produkt ist nicht verfügbar |
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TSM220NB06LCR RLG | Hersteller : Taiwan Semiconductor |
![]() |
Produkt ist nicht verfügbar |